ds30361 rev. 5 - 2 1 of 4 tb0640m - tb3500m www.diodes.com diodes incorporated features 50a peak pulse current @ 10/1000 s 250a peak pulse current @ 8/20 s 58 - 320v stand-off voltages oxide-glass passivated junction bi-directional protection in a single device high off-state impedance and low on-state voltage helps equipment meet gr-1089-core, iec 61000-4-5, fcc part 68, itu-t k.20/k.21, and ul497b ul listed under recognized component index, file number 156346 mechanical data case: smb, molded plastic plastic material: ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solder plated terminal - solderable per mil-std-202, method 208 polarity: none; bi-directional devices have no polarity indicator weight: 0.093 grams (approx.) marking: date code and marking code (see page 4) ordering information: see page 4 single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. a b c d g h e j characteristic symbol value unit non-repetitive peak impulse current @10/1000us i pp 50 a non-repetitive peak on-state current @8.3ms (one-half cycle) i tsm 30 a junction temperature range t j -40 to +150 c storage temperature range t stg -55 to +150 c thermal resistance, junction to lead r jl 20 c/w thermal resistance, junction to ambient r ja 100 c/w typical positive temperature coefficient for breakdown voltage vbr/ t j 0.1 %/c maximum ratings @ t a = 25 c unless otherwise specified maximum rated surge waveform waveform standard ipp (a) 2/10 us gr-1089-core 300 8/20 us iec 61000-4-5 250 10/160 us fcc part 68 150 10/700 us itu-t, k.20/k.21 100 10/560 us fcc part 68 75 10/1000 us gr-1089-core 50 0 time 100 50 0 i , peak pulse current (%) pp peak value (i ) pp half value t = rise time to peak value r t = decay time to half value p t r t p t c u d o r p w e n tb0640m - tb3500m 50a bi-directional surface mount thyristor surge protective device smb dim min max a 3.30 3.94 b 4.06 4.57 c 1.96 2.21 d 0.15 0.31 e 5.00 5.59 g 0.10 0.20 h 0.76 1.52 j 2.00 2.62 all dimensions in mm
ds30361 rev. 5 - 2 2 of 4 tb0640m - tb3500m www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified part number rated repetitive off-state voltage off-state leakage current @ v drm breakover voltage on-state voltage @ i t = 1a breakover current i bo holding current i h off-state capacitance marking code v drm (v) i drm (ua) v bo (v) v t (v) min (ma) max (ma) min (ma) max (ma) c o (pf) tb0640m 58 5 77 3.5 50 800 150 800 140 t064m tb0720m 65 5 88 3.5 50 800 150 800 140 t072m tb0900m 75 5 98 3.5 50 800 150 800 140 t090m tb1100m 90 5 130 3.5 50 800 150 800 90 t110m TB1300M 120 5 160 3.5 50 800 150 800 90 t130m tb1500m 140 5 180 3.5 50 800 150 800 90 t150m tb1800m 160 5 220 3.5 50 800 150 800 90 t180m tb2300m 190 5 265 3.5 50 800 150 800 60 t230m tb2600m 220 5 300 3.5 50 800 150 800 60 t260m tb3100m 275 5 350 3.5 50 800 150 800 60 t310m tb3500m 320 5 400 3.5 50 800 150 800 60 t350m symbol parameter v drm stand-off voltage i drm leakage current at stand-off voltage v br breakdown voltage i br breakdown current v bo breakover voltage i bo breakover current i h holding current note: 1 v t on state voltage i pp peak pulse current c o off-state capacitance note: 2 notes: 1. i h > (v l /r l ) if this criterion is not obeyed, the tspd triggers but does not return correctly to high-resistance state. the surge recovery time does not exceed 30ms. 2. off-state capacitance measured at f = 1.0mhz, 1.0v rms signal, v r = 2v dc bias. i bo v br v drm v t v bo i h i v i br i drm i pp t c u d o r p w e n
ds30361 rev. 5 - 2 3 of 4 tb0640m - tb3500m www.diodes.com 0.9 t , junction temperature (c) j fig. 2 relative variation of breakdown voltage vs. junction tem p erature v= (t) br j v= (t= 25c) br j 0.95 1 1.05 1.1 1.15 1 . 2 -50 -25 0 25 50 75 100 125 150 175 normalized breakdown voltage 1 10 100 1 1.5 3 2.5 2 4 3.5 5 4.5 i , on-state current (a) t v , on-state voltage (v) t fi g . 4 on-state current vs. on-state volta g e t = 25c j i , off-state current (ua) (drm) t , junction temperature (c) j fi g . 1 off-state current vs. junction temperature 0.001 0.01 1 0.1 10 100 -25 0 25 50 75 100 125 150 v = 50v drm 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1 .4 1.3 1.2 -50 -25 0 25 50 100 75 125 normalized holding current t , junction temperature (c) j fig. 5 relative variation of holding current vs. junction tem p erature i = (t ) hj i = (t = 25c) hj 0.1 1 1 10 100 normalized capacitance v , reverse voltage (v) r fig. 6 relative variation of junction capacitance vs. reverse volta g e bias c = (v ) or c=(v=1v) or t = 25c j f=1mhz v rms =1v t c u d o r p w e n 1 1.05 0.95 -50 normalized breakdown voltage 1 . 1 -25 0 75 50 25 125 100 175 150 v=(t) bo j v=(t=25c) bo j t , junction temperature (oc) j fig. 3 relative variation of breakover voltage vs. junction tem p erature
ds30361 rev. 5 - 2 4 of 4 tb0640m - tb3500m www.diodes.com t c u d o r p w e n ordering information (note 3) notes: 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. marking information date code key xxxxx yww xxxxx = product type marking code yww = date code marking y = year ex: 2 = 2002 ww = week code 01 to 52 device packaging shipping tb0640m-13 tb0720m-13 tb0900m-13 tb1100m-13 TB1300M-13 tb1500m-13 tb1800m-13 tb2300m-13 tb2600m-13 tb3100m-13 tb3500m-13 smb 3000/tape & reel year 2002 2003 2004 2005 2006 2007 2008 2009 code 2 3 4 5 678 9
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